Benchmarking Silicon FinFET With the Carbon Nanotube and 2D-FETs for Advanced Node CMOS Logic Application

In this article, the performance of silicon FinFET is compared with carbon nanotube (CNT-FET) and 2-D field-effect transistors (2D-FETs) for upcoming node CMOS logic application. Based on experimental results, a 17-stage ring oscillator (RO) circuit implemented using compact models to analyze stage-delay energy-delay performances. A tightly positioned 20- 10-nm channel-length-based CNT-FET enhances I ON also increases leakage currents significantly. Due poor electrostatic control increased gate leakage, 2D-FET provide lowered limited ac performance. Thus, targeting an off-state current, delivers more than three times higher drive as well five better performances in comparison 2D-FET. On other hand, scaled organic FETs are yet far away compare technology. Hence, silicon-based (3-D) leading all devices (2-D, 1-D, 0-D) scaling next-generation